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| NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low-speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built-In Base-Emitter Shunt Resistor Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note 1. IC = 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Small-Signal Current Gain Output Capacitance NTE261 NTE262 |hfe| Cob IC = 3A, VCE = 4V, f = 1MHz VCB = 10V, IE = 0, f = 0.1MHz 4.0 - - - - - - 300 200 pF pF hFE VCE(sat) VBE(on) IC = 0.5A, VCE = 3V IC = 3A, VCE = 3V IC = 3A, IB = 12mA IC = 5A, IB = 20mA IC = 3A, VCE = 3V 1000 1000 - - - - - - - - - - 2.0 4.0 2.5 V V V VCEO(sus) IC = 100mA, IB = 0, Note 2 ICEO ICBO IEBO VCE = 50V, IB = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 100 - - - - - - - - 0.5 0.2 2.0 V mA mA mA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. NTE261 .420 (10.67) Max .110 (2.79) C B E .147 (3.75) Dia Max .500 (12.7) Min .250 (6.35) Max NTE262 .500 (12.7) Max C B .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab E |
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